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To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS30ASJ-03
HIGH-SPEED SWITCHING USE
FS30ASJ-03
OUTLINE DRAWING
6.5 5.0 0.2
Dimensions in mm
r
5.5 0.2
1.5 0.2
0.5 0.1
1.0MAX.
2.3MIN.
10MAX.
1.0
A
0.5 0.2 0.8
0.9MAX.
2.3
2.3
2.3
q
w
e
wr q GATE w DRAIN e SOURCE r DRAIN e
4V DRIVE VDSS .................................................................................. 30V rDS (ON) (MAX) .............................................................. 38m ID ......................................................................................... 30A Integrated Fast Recovery Diode (TYP.) ............. 45ns
q
MP-3
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 30 20 30 120 30 30 120 30 -55 ~ +150 -55 ~ +150 0.26
Unit V V A A A A A W C C g
Feb.1999
L = 30H
MITSUBISHI Nch POWER MOSFET
FS30ASJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 10V ID = 15A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 30 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.5 29 44 0.435 15 800 250 110 14 55 65 60 1.0 -- 45 Max. -- 0.1 0.1 2.0 38 73 0.57 -- -- -- -- -- -- -- -- 1.5 4.17 --
Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns
Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 15V, ID = 15A, VGS = 10V, RGEN = RGS = 50
IS = 15A, VGS = 0V Channel to case IS = 15A, dis/dt = -50A/s
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2
40
tw = 10ms
30
100ms 1ms TC = 25C Single Pulse 10ms DC
20
10
0
0
50
100
150
200
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL)
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 50
6V VGS = 10V 8V Tc = 25C Pulse Test
20
VGS = 10V 8V 6V 4V 3V
DRAIN CURRENT ID (A)
40
DRAIN CURRENT ID (A)
16
4V
PD = 30W
30
3V
12
2.5V
20
8
2V Tc = 25C Pulse Test
10
PD = 30W 2V
4
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30ASJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL)
5.0
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m)
Tc = 25C Pulse Test
50
Tc = 25C Pulse Test VGS = 4V
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
4.0
40
3.0
30
10V
2.0
ID = 50A
20
1.0
30A 10A
10 0
0
0
2
4
6
8
10
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL)
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL)
102 7 5 4 3 2 101 7 5 4 3 2
VDS = 5V Pulse Test
40
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
32
Tc = 25C VDS = 10V Pulse Test
TC = 25C 75C 125C
24
16
8
0
0
2
4
6
8
10
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL)
SWITCHING CHARACTERISTICS (TYPICAL)
2 104 7 5 3 2
SWITCHING TIME (ns)
Tch = 25C f = 1MHZ VGS = 0V
CAPACITANCE Ciss, Coss, Crss (pF)
102 7 5 4 3 2 101 7 5 4 3 2
td(off) tf tr td(on)
103 7 5 3 2 102 7 5 3 2
Ciss
Coss Crss
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
100 0 10
Tch = 25C VDD = 15V VGS = 10V RGEN = RGS = 50
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30ASJ-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
10
SOURCE CURRENT IS (A)
Tch = 25C ID = 30A
8
40
6
VDS = 10V 20V 25V
30
4
20
TC = 125C 75C 25C
2
10
0
0
4
8
12
16
20
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 4.0
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
3.2
2.4
1.6
0.8
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2
1.2
1.0
D = 1.0 0.5 0.2
tw
0.8
PDM 0.1 0.05 0.02 0.01 Single Pulse
T D= tw T
0.6
0.4
-50
0
50
100
150
10-1 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (C)

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